Back ] Up ] Next ]
Home
Contents
Background
Past Work
Silicon Info
Contact

 

Past Work:  Si Filament (Si Fi) Growth


To explore crystal growth of thin Si filaments for potential use in applications such as PV multi-concentrator arrays, IR light guides, and delay lines, we used three methods:

  -High-purity, single-crystal pedestal float-zoning (top)
  -Rapid dendrite growth from supercooled melts (middle)
  -Solidifying tubular filaments from capillary dies (bottom).

Charge-carrier lifetimes of 660 ms, 53 ms, and 42 ms were seen, respectivelyThis work was a feasibility demonstration. Some X-ray topographic and lifetime characterization was carried out, but additional effort would be needed to fully characterize the materials and demonstrate devices. For more details, see the references below.

______________
T.F. Ciszek and T.H. Wang, "Growth and Properties of Silicon Filaments for Photovoltaic Applications," in: 26th IEEE Photovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 103-106.
T.F. Ciszek and T.H. Wang, "Float-zone Pedestal Growth of Thin Silicon Filaments," in: High Purity Silicon V, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson (The Electrochemical Soc., Proceedings Volume 98-13, New Jersey, 1998) pp. 85-89.

 

wpe18.jpg (2686 bytes)

wpe19.jpg (5962 bytes)

wpe1A.jpg (3393 bytes)

 

Siliconsultant, P.O. Box 1453, Evergreen, CO 80437 USA                                   e-mailted_ciszek@siliconsultant.com

Home

Contents

This page was last updated on June 19, 2016